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1. J. Shen, J. Cong, Y. Chai, D. Shang, S. Shen, K. Zhai, Y. Tian, Y. Sun, Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects. Physical Review Applied 6, 021001 (2016).

2. J. Shen, J. Cong, D. Shang, Y. Chai, S. Shen, K. Zhai, Y. Sun, A multilevel nonvolatile magnetoelectric memory. Scientific reports 6, 34473 (2016).

3. J. Shen, D. Shang, Y. Chai, Y. Wang, J. Cong, S. Shen, L. Yan, W. Wang, Y. Sun, Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure. Physical Review Applied 6, 064028 (2016).

4. J. Shen, D. S. Shang, Y. S. Chai, S. G. Wang, B. G. Shen, Y. Sun, Mimicking Synaptic Plasticity and Neural Network Using Memtranstors. Advanced Materials 30, e1706717 (2018).

5. 申见昕, 尚大山, 孙阳, 基于磁电耦合效应的基本电路元件和非易失性存储器. 物理学报Acta Physica Sinica 67(12), 127501 (2018).

6. P. Lu, D. Shang, J. Shen, Y. Chai, C. Yang, K. Zhai, J. Cong, S. Shen, Y. Sun, Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures. Applied Physics Letters 109, 252902 (2016).

7. J. Shen, P. Lu, D. Shang, Y. Sun, Realization of complete Boolean logic functions in a single memtranstor. submitted (2019).